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this is information on a product in full production. august 2013 docid15732 rev 4 1/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 n-channel 650 v, 0.75 typ., 10 a supermesh3? power mosfets in d 2 pak, to-220fp, i 2 pakfp and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely low on-resistance r ds(on) ? gate charge minimized ? very low intrinsic capacitances ? improved diode reverse recovery characteristics ? zener-protected applications ? switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. '7$% * 6 am01476v1 to-220 to-220fp i 2 pakfp (to-281) 1 2 3 1 2 3 tab 1 3 tab d 2 pak order codes v ds r ds(on) max i d p tot STB10N65K3 650 v 1 10 a 150 w stf10n65k3 35 w stfi10n65k3 stp10n65k3 150 w table 1. device summary order codes marking package packaging STB10N65K3 10n65k3 d 2 pak tape and reel stf10n65k3 to-220fp tube stfi10n65k3 i 2 pakfp (to-281) stp10n65k3 to-220 www.st.com
contents STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 2/21 docid15732 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid15732 rev 4 3/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i 2 pakfp d 2 pak, to-220 v ds drain source voltage 650 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 10 a i d drain current (continuous) at t c = 100 c 6.3 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 35 150 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7.2 a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v 212 mj derating factor 0.28 1.2 w/c dv/dt (3) 3. i sd 10 a, di/dt = 100 a/s, v peak < v (br)dss peak diode recovery voltage slope 12 v/ns esd gate-source human body model (r = 1.5 k , c = 100 pf) 2.8 kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit d 2 pak to-220fp i 2 pakfp to-220 r thj-case thermal resistance junction-case max 0.83 3.57 0.83 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w
electrical characteristics STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 4/21 docid15732 rev 4 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1a 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3.6 a 0.75 1 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1180 - pf c oss output capacitance - 125 - pf c rss reverse transfer capacitance -14-pf c oss eq. equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 77 - pf r g intrinsic gate resistance f=1 mhz, i d =0 - 3 - q g total gate charge v dd = 520 v, i d = 7.2 a, v gs = 10 v (see figure 18 ) -42-nc q gs gate-source charge - 7.4 - nc q gd gate-drain charge - 23 - nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 310 v, i d = 3.5 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 14.5 - ns t r rise time - 14 - ns t d(off) turn-off-delay time - 44 - ns t f fall time - 35 - ns
docid15732 rev 4 5/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 electrical characteristics 21 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 7.2 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 28.8 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 7 a, di/dt = 100a/s v dd = 60 v (see figure 22 ) -320 ns q rr reverse recovery charge - 2 c i rrm reverse recovery current - 13 a t rr reverse recovery time i sd = 7 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) -410 ns q rr reverse recovery charge - 2.9 c i rrm reverse recovery current - 14 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 6/21 docid15732 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak and to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1s 10s 10s 1ms tj=150c tc=25c sinlge pulse 10ms am15460v1 figure 4. safe operating area for to-220fp and i 2 pakfp figure 5. thermal impedance for to-220fp and i 2 pakfp i d 10 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am03922v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v ds (v) 20 (a) 8 10 5v 6v 7v v gs =10v 12 14 16 18 am03923v1 i d 3 2 1 0 1 4 v gs (v) 8 (a) 2 6 4 5 3 5 7 9 6 7 8 9 10 11 12 v ds = 15 v am03924v1
docid15732 rev 4 7/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 electrical characteristics 21 figure 8. normalized bv dss vs temperature figure 9. static drain-source on resistance figure 10. output capacitance stored energy figure 11. capacitance variations figure 12. gate charge vs gate-source voltage figure 13. normalized on-resistance vs temperature bv dss -75 -25 t j (c) (norm) -50 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 150 0 i d = 1 ma am03925v1 r ds(on) 0.75 0.70 0.65 0.60 0 2 i d (a) ( ) 1 3 0.80 0.85 0.90 0.95 4 5 6 7 v gs = 10 v am03926v1 e oss 3 2 1 0 0 100 v ds (v) (j) 400 4 200 300 5 6 500 600 7 8 am03929v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am03928v1 v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =520v i d =7a 50 12 300 200 100 0 400 500 v ds (v) am03927v1 r ds(on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 2.5 0.0 i d = 1.2 a am03931v1
electrical characteristics STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 8/21 docid15732 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. maximum avalanche energy vs temperature figure 16. source-drain diode forward characteristics v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 150 i d = 100 a am03930v1 e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 160 180 200 220 i d =7.2 a v dd =50 v am03933v1 v sd 0 2 i sd (a) (v) 1 5 3 4 0.4 0.5 0.6 0.7 0.8 0.9 t j =-50c t j =150c t j =25c 8 6 7 0.3 am03932v1
docid15732 rev 4 9/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 test circuits 21 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 10/21 docid15732 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid15732 rev 4 11/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 package mechanical data 21 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 12/21 docid15732 rev 4 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid15732 rev 4 13/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 package mechanical data 21 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 14/21 docid15732 rev 4 figure 25. to-220fp drawing 7012510_rev_k_b
docid15732 rev 4 15/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 package mechanical data 21 figure 26. i 2 pakfp (to-281) drawing table 11. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 uhy$
package mechanical data STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 16/21 docid15732 rev 4 table 12. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid15732 rev 4 17/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 package mechanical data 21 figure 27. to-220 type a drawing bw\sh$b5hyb7
packaging mechanical data STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 18/21 docid15732 rev 4 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid15732 rev 4 19/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 packaging mechanical data 21 figure 28. tape figure 29. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 20/21 docid15732 rev 4 6 revision history table 14. document revision history date revision changes 30-jun-2009 1 first release 14-nov-2011 2 updated mechanical data and section 2.1: electrical characteristics (curves) . minor text changes. 14-nov-2012 3 ? added: i 2 pakfp and to-220 ? deleted: t i row ? added: r ds(on) typical value, figure 2 and 3 ? modified: figure 2 ? updated: section 4: package mechanical data 05-aug-2013 4 ? added: d 2 pak package ? added: r thj-pcb in table 3 ? updated: figure figure 17 , 18 , 19 and 20 ? updated: section 4: package mechanical data and section 5: packaging mechanical data ? minor text changes
docid15732 rev 4 21/21 STB10N65K3, stf10n65k3, stfi10n65k3, stp10n65k3 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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